MoO3 and organic/MoO3 hybrid thin films were prepared on a silicon substrate with an LaAlO3 or a CeO2 buffer layer. The MoO3 thin film, which was deposited by chemical vapor deposition, was soaked in an aqueous sodium hydrosulfite solution and aqueous butylammonium (BuNH3) solution to prepare (BuNH3)(x)MoO3 hybrid thin films. The high b-axis-oriented MoO3 gains was crucial in preventing the thin film from peeling off due to expansion of its interlayers during the intercalation process. Highly b-axis-oriented MoO3 grains can be deposited on the buffer layer at high temperatures, indicating that the film can work as a gas-sensing element. (c) 2006 Elsevier B.V. All rights reserved.