Integration of organosilicate glass (OSG) and organofluorinated silicate glass (OFSG) low-k materials deposited using trimethylsilane precursor as interlayer dielectric (ILD) was investigated in this study. Although the full OSG structure showed the lowest capacitance, this structure suffered the integrated challenge, such as the poor deposition uniformity, chemical ashing damage, and cracking issues. Thus, a hybrid ILD scheme is introduced, which is stacked with OSG and OFSG dielectrics to address these issues. The process for this hybrid ILD scheme was optimized for deposition uniformity, permittivity, mechanical strength, low-k material damage, and electromigration resistance. An optimized ILD structure was integrated into 0. 13 mu m Cu damascene process technology and showed much improvement compared to the full OSG or OFSG structure. The results of this study indicated that the hybrid structure which consists of the OSG and OFSG dielectrics can be successfully implemented in fully integrated interconnect structure. (c) 2007 American Vacuum Society.