Choice of substrate used for analog complementary metal-oxide-semiconductor (CMOs) technologies impacts device performance and fabrication yields significantly. This study examines the impact of low-angle (< 5 degrees) off-axis Si(100) substrate rotated around l 10 axis and 0 degrees Si(100) on-axis starting material on inline process control, parametric device performance, and ultimately fabrication yields. The interaction of thermal processes and silicon epitaxial growth process variation on infine photoalignment and its influence on device design and performance is discussed for both types of substrates. The device components include 3 and 5 V analog CMOs, lateral p-n-p bipolar transistor, junction field effect transistors, and drain extended transistors, DENMOS and DEPMOS, where the drain extensions are formed using well implants. The necessity to reintegrate silicon epitaxial growth, well photolithography and implants, Vt implants, and gate oxide process loop to accommodate substrate crystal orientation changes will be presented. A novel front-end-of-the-line integration scheme to improve interwafer and intrawafer electrical distributions with excellent transistor matching and I If noise performance for aforementioned device components will also be discussed in this context. (c) 2007 American Vacuum Society.