The etch characteristics of IZO thin films were studied in a high density inductively coupled plasma. The etch rates and etch profiles of IZO thin films were investigated as a function of C2F6 gas concentration in C2F6/Ar gas mix, coil rf power, and dc-bias voltage. Etch rates were measured by alpha-step and etch profiles were observed by field emission scanning electron microscope. Etch profiles of IZO thin films were improved at lower C2F6 gas concentration, and higher coil rf power and dc-bias voltage.