Reactive sputtering from three metallic targets (Ti, Zr, and Ph) in O-2 and At gas mixture was utilized to deposit in-situ crystallized Pb(Zr,Ti)O-3 (PZT) thin films onto ZrO2 buffered 6" Si-wafers. The plasma emission control of reactive sputtering was used to stabilize Ti target in the "transition region" during co-sputtering. The stable and reproducible PZT thin film deposition on large area has been demonstrated. The reactive sputtering behavior of the metal targets has been explained on the basis of the change in surface binding energies. The morphological, structural, and chemical properties of PZT have been examined as a function of deposition temperature (480-580 degrees C). At the deposition temperature of 580 degrees C, the PZT films crystallized directly into the perovskite phase. (c) 2006 Elsevier B.V. All rights reserved.