Fabrication, characterization, and modeling of both p-n heterojunction and homojunction were investigated at different ambient temperatures. The measured current-voltage characteristics at different ambient temperatures were in good agreement with calculated characteristics using the dual-diode (DD) model. The DD model together with a numerical method that could be used to extract the parameters has described well the characteristics of the proposed p-n junction under forward bias. The effective diffusion velocity of holes in the n region (V-p), effective diffusion velocity of electron in the p region (V-n), and average recombination lifetimes in heterojunction (tau(r-HE)) and in homojunction (tau(r-HO)) were deduced from the extracted diffusion current density (J(d)) and recombination current density (J(r)). In the temperature range of 300-425 K, the effective diffusion velocities vary as T-22 and average recombination lifetimes vary as T-9.5. (c) 2007 The Electrochemical Society.