We have investigated metalorganic vapor phase epitaxy (MOVPE) growth of AlxIn1-xP alloy using tertiarybutylphosphine (TBP) as the phosphorus source in pure N-2 ambient. The effect of the substrate temperature on the aluminum composition of AlxIn1-xP epilayers during the MOVPE growth has been studied. When the source flow rates were kept unchanged, the aluminum composition of the AlxIn1-xP epilayer increased monotonically when the substrate temperature, T-g, was raised from 580 degrees C to 660 degrees C during the growth. It became saturated when T, reached 660 degrees C and above. The crystalline quality of the grown AlxIn1-xP epilayers has been investigated by X-ray diffraction and photoluminescence measurements. A linear relationship between the aluminum composition of the AlxIn1-xP epilayer and TMA1/(TMA1 + TMIn) source flow ratio has been obtained when grown at the optimized growth temperature of T-g=630 degrees C. It has also been observed that the aluminum incorporation coefficient of AlxIn1-xP epilayers decreased when the V/III source flow ratio was increased during the MOVPE growth. (c) 2006 Elsevier B.V. All rights reserved.