We report the structural and optical properties of InN films on Si(111) prepared by ion-bearn-assisted filtered cathodic vacuum arc technique. X-ray diffraction and Raman spectroscopy measurements indicated that all the InN films were hexagonal crystalline InN. The InN films deposited at substrate temperature of 475 degrees C exhibited highly (0001) preferred orientation and texturing (cratered) surface morphology. The oxygen incorporated in the InN films was segregated in the form of amorphous indium oxide or oxynitride phases at the grain boundaries. Photoluminescence emission of similar to 1.15 eV was observed at room temperature from the InN films. (c) 2006 Elsevier B.V. All rights reserved.