This article presents a test method for a nondestructive strength characterization of full-wafer bonds. The test is based on a modification of the common destructive blister test. Thereby, special geometries enable a controlled crack generation at the bond interface. Based on the theory of energy conservation, a theoretical model was built up and a crack propagation parameter was introduced. Three test strategies were established, an "analog" strategy, that can be used for a statistical evaluation, a "digital" strategy, that enables a redundant test analysis, and a "binary" strategy, that can be used as one-shot measurement (similar to the common blister test) or as bond gauge to guarantee a certain bond strength. For the geometric design, analytical models in combination with numerical simulations were used. Bonded wafers including these test structures were fabricated and the bond strength was measured. The result was compared to the common double cantilever beam (DCB) test as a standard. An excellent agreement of both test methods was shown. (C) 2007 The Electrochemical Society.