The authors have etched NiCr through a resist mask using Cl/Ar based chemistry in an electron cyclotron resonance etch system. The optimum gas mixture and etch parameters were found for various ratios of Ni to Cr, based on the etch rated redeposits, and the etch ratio to the mask. The introduction of O-2 into the chamber, which is often used in the etching of Cr, served to both increase and decrease the etch rate depending explicitly on the etching parameters. Etch rates of >50 nm mint and ratios of > I (NiCr:Mask) were achieved for NiCr (80:20). Pattern transfer from the mask into the NiCr was achieved with a high fidelity and without redeposits for a Cl/Ar mix of 10% Ar (90% Cl-2) at an etch rate of approximate to 50 nm min(-1) and a ratio of 0.42 (NiCr:ZEP 7000 e-beam mask). (C) 2007 American Vacuum Society.