AIN films were deposited on microscopy glass slide and silicon (111 orientation) substrates by reactive ac magnetron sputtering using two nitrogen concentrations and three discharge powers of 1.5, 2.5, and 5.0 kW. X-ray diffraction studies showed that films prepared on glass and Si substrates were of hexagonal wurtizite phase. Films on Si substrates also contained small amounts of the cubic phase of AIN besides the predominantly hexagonal wurtizite phase. AIN coatings on glass substrates were textured towards the (00.2) plane; this preferred orientation of crystals was found to decrease with increase in sputtering power. Scanning electron microscopy studies showed that AIN films prepared at higher nitrogen concentration have a microstructure consisting of pebblelike crystals, some of which were hexagonal in shape. The crystal size in the coatings increased with sputtering power and was in the range of 70-230 run. (C) 2007 American Institute of Physics.