The structure and main manufacturing technologies of CdTe film solar cells of large area are reviewed. Among the technologies, some have been developed for application in a pilot manufacturing line. The high resistant SnO2 (HRT) thin films have been fabricated by PECVD. The effects of annealing on the structure and properties have been studied. A surface etching process of CdTe in low temperature and lower concentration of nitric acid has been developed. The Cd-1 -xZnxTe ternary compound films have been studied. In order to improve the back contact layer, Cd0.4Zn0.6Te layer with 1.8 eV band gap as a substitute for ZnTe layer is introduced in CdTe cells. The effects of the technologies on performance of CdTe cells and feasibility of application in the modules are discussed. (C) 2006 Elsevier B.V. All rights reserved.