Single-phase Cu(In,Ga)(S,Se)(2) (CIGSS) thin films have been prepared using a two-step process consisting of annealing of Cu-In-Ga precursors in S/Se ambient. Full characterizations have been carried out using XRD, SEM, EDS, Raman spectroscopy and optical absorption measurements. The depth profiles of constituent elements Cu, In, Ga, S and Se were almost constant throughout the film. Depending on overall Ga content and recrystallization temperature CIGSS thin films exhibited a shift in band gap from 1.04 to 1.19 eV. (C) 2006 Elsevier B.V. All rights reserved.