Strontium ruthenate and Bi3.25La0.75Ti3O12 (BLT) layers were grown on Si(100) substrate using pulsed laser deposition technique. Starting from a Sr2RuO4 target, we obtained single phase films composed of Sr4Ru2O9; on these strontium ruthenate electrodes, textured and non-textured BLT were grown at 700 degrees C. Structural characterizations of these double layers were done by X-ray diffraction, scanning electron microscopy, normal and high-resolution transmission electron microscopy. The Van der Pauw's resistivity measurements indicate that Sr4Ru2O9 can be used as a back electrode. The temperature dependence of the resistivity at low temperatures is rho(T) =rho(0)exp poexp(T-0/T)(1/2), which corresponds to a variable-range hopping mechanism. (C) 2006 Elsevier B.V. All rights reserved.