In this article, we address some critical issues to the hetero-epitaxial growth of SrTiO3 on Si, with emphasis on the interface properties. A two-step growth process allows us to obtain oxide films with high crystallinity, and prevent the formation of an amorphous silicon oxide at the interface. The chemical and structural properties of the interface were evaluated using reflection high energy electron diffraction and X-ray photoelectron spectroscopy. Conditions of hetero-epitaxial growth were first calibrated by a preliminary study of the homo-epitaxial growth of SrTiO3. (C) 2007 Elsevier B.V. All rights reserved.