AglnSe(2) (AIS) films were grown on n-type Si substrates by the ultra-high-vacuum pulsed laser deposition technique from the AIS target synthesized from high-purity materials. The X-ray diffraction and microscopic studies of the films show that films are textured having terrace-like surface morphology. The optical studies of the films show that the optical band gap is about 1.24 eV The electrical conductivity of AgInSe2/Si films shows excellent diode characteristics. The photoconductivity of the AglnSe(2)/Si device shows photocurrent of 2.8 mA at a bias-voltage of -1 V with an open circuit voltage of 0.15 V. This shows that AIS films are very good absorber material for solar cell technology. (C) 2007 Elsevier B.V. All rights reserved.