Chemical Physics Letters, Vol.318, No.1-3, 58-62, 2000
Thin beta-SiC nanorods and their field emission properties
Beta-silicon carbide (beta-SiC) nanorods (diameter, ca. 5-20 nm; length, 1 mu m) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown beta-SiC nanorods on a porous silicon substrate is 13-17 V/mu m.