Galvanostatic electrocrystallization of a TTF-based donor-radical (ETBN) has afforded an ion-radical salt. The radical site of ETBN is intact in the prepared salt and showed paramagnetic behavior. The salt is a semiconductor with conductivity of 10(-2) S/cm at room temperature. Conductivity and magnetic properties are explained as a new type of an ion-radical salt derived from a pi-conjugated donor-radical.