A newly constructed plasma molecular beam apparatus has been employed to study SiF radicals produced in a SiF, plasma. The SiF radicals are detected using [2 + 1] resonance enhanced multiphoton ionization (REMPI) combined with time of flight mass spectrometry (TOFMS). The absorption band from the (1, 0) C "(2)Sigma(+) <-- X(2)Pi(1/2) transition of the SiF molecule was monitored. Production of SiF in the plasma has been measured as a function of plasma parameters, including addition of H-2 and O-2, and applied rf power.