We report on a novel phenomenon in oxygen-deficient Ge-doped silica glasses at room temperature. Irradiation of focused 120 fs laser pulses at 800 nm induced long-lasting phosphorescence with peaks at 290 and 390 nm for oxygen-deficient Ge-doped silica glass. The phosphorescence persisted for not less than 1 h after the removal of the irradiating light. The intensity of the phosphorescence at 390 nm increased with an increase in the concentration of oxygen-deficiency associated with Ge ions. Based on the time dependence of the intensity of the phosphorescence, the longlasting phosphorescence in these glasses is considered to be due to the thermally activated electron-hole recombination at shallow traps.