A new synthetic route was developed to obtain beta-Ga2O3 nanowires by heating mixed B and Ga2O3 powder precursor at 1600degreesC under Ar atmosphere. The nanowires have widths of 30-60 nm. and perfect crystallinity. When the heating of B and Ga2O3 powder precursor was carried out in N-2 atmosphere, beta-Ga2O3 nanowires sheathed with BN layers (3-5 nm) were yielded. The structure and composition of the products were characterized. The growth scenario for the beta-Ga2O3 nanowires as well as the formation of outer BN sheaths was also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.