Low dielectric constant SiCFO films were grown on oxidized p-type Si (10 0) using SiH4 and CF4 in plasma enhanced chemical vapor deposition reactor. The film showed good water resistance and quite low dielectric constant in a range of 1.3-2.0. The growth rate, chemical structure, and dielectric constant were quite dependent on the plasma source power. Fourier transform infrared spectroscopy (FT-IR) spectra showed Si-O, C-F and C-C bonds, but no C-H, H-O-H and Si-OH bonds formed. The as-grown film also showed good adhesion at the interface and smooth surface morphology. (C) 2002 Elsevier Science B.V. All rights reserved.