Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties

Yang TH; Chen CH; Chatterjee A; Li HY; Lo JT; Wu CT; Chen KH; Chen LC

Chemical Physics Letters, Vol.379, No.1-2, 155-161, 2003

DOI10.1016/j.cplett.2003.08.001 Export Citation

Controlled growth of silicon carbide nanorods by rapid thermal process and their field emission properties

Yang TH, Chen CH, Chatterjee A, Li HY, Lo JT, Wu CT, Chen KH, Chen LC

Silicon carbide nanorods with a typical diameter of about 20 nm and a length ranging from 100 nm to a few microns have been formed by rapid thermal processing (RTP) of thin films containing a mixture of carbon and iron over silicon wafers at temperatures ranging from 1000 to 1200 degreesC. It is proposed that SiC nanorods were formed by solid-liquid-solid process of Si and C with Fe as catalyst. The controllability offered by RTP is crucial as field emission study showed that the turn-on field of the SiC nanorods was a strong function of their length and number density. (C) 2003 Elsevier B.V. All rights reserved.