N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

Kanbara T; Shibata K; Fujiki S; Kubozono Y; Kashino S; Urisu T; Sakai M; Fujiwara A; Kumashiro R; Tanigaki K

Chemical Physics Letters, Vol.379, No.3-4, 223-229, 2003

DOI10.1016/j.cplett.2003.07.025 Export Citation

N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

Kanbara T, Shibata K, Fujiki S, Kubozono Y, Kashino S, Urisu T, Sakai M, Fujiwara A, Kumashiro R, Tanigaki K

N-channel field effect transistors (FETs) were fabricated with thin films of C-60 and Dy@C-82. A typical enhancement-type FET property was observed in C-60 FET above 220 K. The mobility Of C-60 FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C-82 FET was found to be a normally-on type FET, which has a property different from that for C-60 and C-70 FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C-60 and pentacene thin-film FETs. (C) 2003 Elsevier B.V. All rights reserved.