Using the deposition of Ta on Ta(1 0 0) surface as a model, we illustrate a theoretical principle for controlling the shape of nanostructure grown on anisotropically strained substrates. The anisotropic strain induces asymmetric diffusion barriers and reduces the potential energy at the tip of the islands formed in initiate stage of the deposition. As a result, a clear transition from zero-dimensional quantum dots to one-dimensional nanorods and nanowires structures with controllable thickness were observed. This investigation demonstrates the feasibility of applying this technique to control the shape of nanostructures by optimizing the substrate temperature compression and deposition rate. (C) 2004 Published by Elsevier B.V.