화학공학소재연구정보센터
Chemical Physics Letters, Vol.406, No.1-3, 197-201, 2005
Ab initio study of nucleation on the diamond(100) surface during chemical vapor deposition with methyl and H radicals
Ab initio calculations have been performed to investigate the initial stage of the CVD growth of the diamond (100) surface with CH3 and H radicals. The reaction and the activation energies were calculated for nucleation on a flat terrace, the so-called dimer mechanism. CH2 insertion is found to be the rate-determining step of the dimer mechanism. CVD growth via the dimer mechanism is thermodynamically favorable, however, it is expected to be slow due to the high activation barrier. (c) 2005 Elsevier B.V. All rights reserved.