High-density, oriented silicon nanowires (SiNWs) array were fabricated on (0 0 1) silicon substrates by the oxide-assisted growth method assisted with Au catalyst in a hot filament chemical vapor deposition system. The yield of SiNWs was different with the synthesis temperature. Au particles were present at the tips of the SiNWs and limited the wire diameter. High resolution transmission electron microscopy revealed the epitaxial SiNWs on the Si substrate. (c) 2005 Elsevier B.V. All rights reserved.