Field-effect transistors with good performance using new electron donor-pi-acceptor molecules as the active layers

Wen GY; Wang Y; Song YB; Lu ZL; Zhang DQ; Liu YQ; Zhu DB

Chemical Physics Letters, Vol.431, No.4-6, 370-374, 2006

DOI10.1016/j.cplett.2006.10.009 Export Citation

Field-effect transistors with good performance using new electron donor-pi-acceptor molecules as the active layers

Wen GY, Wang Y, Song YB, Lu ZL, Zhang DQ, Liu YQ, Zhu DB

Two new D-pi-A molecules 1 and 2 were prepared from the reaction between the Fisher's base and 7,7,8,8-tetracyano-p-quinodi-methane (TCNQ)/tetracyanoethylene (TCNE). OFETs with the thin-films of I and 2 as the active layers (semiconductors) were fabricated. These OFETs show relatively high mobility (up to 10(-2) cm(2) v(-1) s(-1)) and on/off ratio (up to 10(5)). In particular, these OFETs have rather low threshold voltages. (c) 2006 Elsevier B.V. All rights reserved.