Chemistry Letters, Vol.29, No.3, 254-255, 2000
Dramatic increase in thermal stability by partial phenylethynylation at the silicon center in poly[(dihydrosilylene)-1,3-phenylene]
Partial ethynylation of the Si-H in poly[(dihydrosilylene)(1,3-phenylene)] dramatically increases thermal stability of the polymer. The T-d5 value observed for [SiH1.44(C=CPh)0.56( 1,3-C6H4)](n) is 820 degrees C, which is much higher than the value (586 degrees C) of a commercial polyimide (Kapton, DuPont).