Organic field-effect transistors using di(2-thienyl)naphthodithiophenes as active layers

Kunugi Y; Takimiya K; Yamashita K; Aso Y; Otsubo T

Chemistry Letters, Vol.31, No.10, 958-959, 2002

Kunugi Y, Takimiya K, Yamashita K, Aso Y, Otsubo T

Two isomeric di(2-thienyl)naphthodithiophenes, anti- and syn-DThNDTs, have been investigated as active materials of organic field-effect transistors (FETs). Field-effect mobilities of 2-3 x 10(-4) cm(2) V-1 S-1 were obtained for the anti-DThNDT film, while no obvious FET function was observed with the syn-DThNDT film.