Chemistry Letters, Vol.33, No.6, 706-707, 2004
Novel electron-beam molecular resists with high resolution and high sensitivity for nanometer lithography
A novel class of chemically-amplified, electron-beam molecular resists for nanometer lithography were created. These molecular resists functioned as positive resists in the presence of an acid generator, exhibiting a high sensitivity of approximate to2 muC cm(-2) and enabling the fabrication of approximate to25 nm line patterns.