A simple processing technique has been developed for joining Si3N4,-based ceramics. Thin (<5 m thick), amorphous, or partially crystalline SiO2-based surface layers were formed, via low-temperature oxidation (at 1200 degreesC), on the faces to be joined. Joining of the surface-coated pieces could then be performed in an inert environment at typical sintering/joining temperatures (i,e., 1700 degreesC), with or without applied gas pressure, via a transient viscous/liquid phase. This method was most effective for Si3N4 ceramics with single oxide sintering additives when a thin (similar to1 mum thick), highly smooth (RMS roughness <60 nm) SiO2 layer was formed, and essentially 'pore-free' joints could be formed. However, the method was less suitable for a multi additive SiAlON material under current experimental conditions, as relatively high roughness (RMS roughness >400 nm) oxide scales formed, leaving residual porosity at the joint interface.