화학공학소재연구정보센터
Journal of the American Ceramic Society, Vol.84, No.10, 2394-2400, 2001
Tensile creep behavior of a gas-pressure-sintered silicon nitride containing silicon carbide
The tensile creep behavior of a gas-pressure-sintered silicon nitride containing silicon carbide was characterized at temperatures between 1375 degrees and 1450 degreesC with applied stresses between 50 and 250 MPa. Individual specimens were tested at fixed temperatures and applied loads. Each specimen was pin-loaded within the hot zone of a split-tube furnace through silicon carbide rods connected outside the furnace to a pneumatic cylinder. The gauge length was measured by laser extensometry, using gauge markers attached to the specimen. Secondary creep rates ranged from 0.54 to 270 Gs(-1), and the creep tests lasted from 6.7 to 1005 h. Exponential functions of stress and temperature were fitted to represent the secondary creep rate and the creep lifetime. This material was found to be more creep resistant than two other silicon nitride ceramics that had been characterized earlier by the same method of measurement as viable candidates for high-temperature service.