The essential steps required to create GaN seed crystals for bulk crystal growth from thick films are described. These steps include the growth of low-dislocation-density GaN films using a hydride vapor-phase epitaxy route, the separation of the films from the sapphire substrate on which they are grown, and the subsequent growth of GaN on both sides of the free-standing films. These steps are illustrated with examples that emphasize the growth of material with low threading dislocations.