Strontium titanate (SrTiO3)-based multilayered film with varistor characteristics has successfully been fabricated by a chemical solution deposition (CSD) method. Homogeneous precursor solutions of SrTiO3 and Nb:SrTiO3 with long-term stability could be prepared by optimizing the reaction conditions among strontium ethoxide, titanium isopropoxide, and niobium ethoxide. Films were prepared using the precursor solutions on fused silica substrates at 700degreesC. Triple layered films with SrTiO3/Nb:SrTiO3/SrTiO3 structure were also successfully crystallized on Pt/Ti/SiO2/Si substrates at 700degreesC. The current-voltage (I-V) curve of the multilayered film was characteristic to varistors and the nonlinear coefficient alpha of the synthesized film was similar to3.0. The varistor voltages (E-0.01) of 0.6-mum-thick film were 140 kV/cm for the forward direction and -120 kV/cm for the reverse direction, respectively, at room temperature.