A TiN precursor solution was synthesized by galvanostatic electrolysis of Ti metal and isopropylamine at a current density of 50 mA.cm(-2) at room temperature. TiN films were prepared by dip-coating of the precursor solution on a Si wafer, followed by two-stage heat treatment at 400degreesC and a fixed temperature of 800-1200degreesC in flowing N-2, N-2/NH3, or NH3 gas. The TiN films were characterized by XRD, chemical analysis, XPS, and electrical resistivity measurements. The TiN films were composed of uniform grains 20 to 200 nm in size with thicknesses ranging from 300 to 400 nm at temperatures of 800-1200degreesC. The effect of the heat treatment atmosphere (N-2 and NH3) on the impurity content, crystallinity, particle size, and electrical resistivity is discussed.