Nanocrystalline films Of SnO2 were deposited by liquid How deposition (LFD), i.e., by flowing aqueous solutions of SnCl4-5H(2)O and HCl over single-crystalline silicon substrates at 80degreesC. The substrates were either oxidized and fully hydrolyzed (bare silicon) or oxidized, hydrolyzed, and then coated with siloxy-anchored organic self-assembled monolayers (SAMs). Continuous, adherent films formed on sulfonate- and thioacetate-functionalized SAMs; adherent but sometimes discontinuous films formed on bare silicon and methylfunctionalized SAMs. The films contained equiaxed cassiterite crystals, similar to4-10 nm in size. The film thickness increased linearly with deposition time. The maximum growth rate observed was 85 nm.h(-1) on sulfonate SAM, and the maximum film thickness obtained was 1 mum. A new dimensionless parameter, the normalized residence time, tau, was introduced for the purpose of interpreting the influence of solution conditions (i.e., degree of supersaturation, as controlled via pH, and tin concentration) and flow characteristics (flow rate and the configuration of the deposition chamber) on the growth rate in LFD processes. The results were consistent with a particle attachment mechanism for film growth and inconsistent with heterogeneous nucleation on the substrate.