Journal of the American Ceramic Society, Vol.87, No.2, 302-304, 2004
Influence of Cu2O on interface behavior of copper/SiCp composite prepared by spark plasma sintering
Copper/SiCp composites were prepared by spark plasma sintering. X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy techniques were used to characterize the sintered samples. Cu2O was found to facilitate the physical wetting at the interface through the formation of an amorphous intergranular phase. The reaction between SiC and copper was detected in the samples containing little Cu2O. It led to the degradation of SiC reinforcements and the decrease in hardness of copper/SiCp composites.