dFerroelectric SrBi2(Ta,Nb)(2)O-9 (SBTN) thin films were deposited on Pt (200 nm)/TiOx (40 nm)/SiO2 (100 nm)/Si substrates by metal-organic decomposition. The effects of bombardment from accelerated argon and oxygen ions on the properties of SBTN thin films were investigated. It was found that the argon ion bombardment could decrease the crystallization temperature owing to the increase of internal energy of the films. Also, the oxygen vacancies at the interface between the SBTN film and platinum bottom electrode or at grain boundaries in the film were passivated through the oxygen ion treatment, resulting in the improved electrical properties. By optimizing the process parameters and using bombardment of accelerated argon and oxygen ions, SBTN films with good ferroelectric and electrical properties could be obtained, at a temperature as low as 650degreesC.