Silicon carbide (SiC) specimens were amorphized with neon ions and annealed at 1273 K via transmission electron microscopy (TEM). Two types of annealing procedures were conducted: (i) continuous annealing for 60 min and (ii) annealing for 5 min, repeated 10 times. TEM observations revealed that crystal nucleation was more apt to occur in the SiC amorphized by repeated annealing than in the continuously annealed SiC.