A system of an insulating Bi2O3-based frit and a conductive SnO2:Sb has been developed for printing and firing on glass substrates. Resistivity can be progressively decreased from > 200 G Omega to the megaohm region by adding micron size SnO2:Sb in the thick film formulation. More SnO2:Sb is required for a given resistivity when alumina is added as a filler, and resistivity is dependent on alumina particle size. Controllably reducing resistivity of a dielectric is useful in field emission display applications to eliminate charging between emitter lines and to function as a ballast resistor layer.