화학공학소재연구정보센터
Journal of the American Ceramic Society, Vol.88, No.8, 2319-2321, 2005
Gas release of SiC implanted with deuterium or helium
Helium (He+) or Deuterium (D-2(+)) (20 keV) was implanted into polycrystalline beta-SiC with an ion dose of 7.2 x 10(21) (D or He)/ M-2. The implanted specimens were heated at a heating rate of 10 or 20 K/min from room temperature to 1373 K, and the thermal release spectroscopic data were obtained. A sharp peak appeared at approximately 1270 K in the case of He release, and here the activation energy was estimated to be approximately 4.4 eV. Two overlapped peaks appeared at approximately 900 and 1200 K in the case of D-2 release. The shapes of spectra showed strong dependence on the heating rate.