화학공학소재연구정보센터
Journal of the American Ceramic Society, Vol.88, No.11, 3229-3231, 2005
Effects of annealing on dielectric loss and microstructure of aluminum nitride ceramics
The effect of annealing on tan delta and microstructures of aluminum nitride (AlN) ceramics were explored. Yttria was added as a sintering additive to AlN powders, and the powders were pressureless-sintered at 1900 degrees C for 2 h in a nitrogen flow atmosphere. In succession to sintering, AlN samples were annealed at 720, 970 and 1210 degrees C for 2 and 4 h. Very low tan delta values between 2.6 and 6.0 x 10(-4) at 28 GHz were obtained when the AlN samples were annealed for 4 h at all the annealing temperatures.