The effect of zirconia (ZrO2) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)-coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO2 buffer layers retained acceptable capacitance densities (> 350 nF/cm(2) for 50 nm thick ZrO2), while significantly reducing leakage currents and improving reliability (< 10(-7) A/cm(2) after 1 h at 25 VDC for 100 nm thick ZrO2), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications.