The glass-forming region in a GeSe2-As2Se3-PbSe system was determined, and the dependence of properties on the composition as a formula of 20 GeSe2-(80-x)As2Se3-xPbSe (x=0-30) was investigated. Measurements include density, differential scanning calorimetry, X-ray diffraction, Vis-NIR, and IR transmission spectra. A fairly large glass-forming region was obtained where the higher lead content could be introduced into the system in the As2Se3-rich region than in the GeSe2-rich region. With the introduction of PbSe, the density of glass increased and the calculated molar volume decreased while the crystallization tendency increased, which was indicated by the decreasing Delta T (T-x-T-g). The activation energy of crystallization and the Avrami exponents were also obtained using the modified Ozawa equation. Under proper annealing conditions, suitable IR transmittance glass-ceramics were obtained.