alpha-In2Se3 thin films were prepared by sequential thermal evaporation of indium and selenium layers followed by annealing in flowing argon. The structure and the phase of the films were confirmed by X-ray diffraction (XRD), scanning electron microscope (SEM), microprobe analysis, optical absorption, Raman measurements and room temperature conductivity measurements. The influence of the preparation on the formation of different In2Se3-modifications is discussed.