Epitaxial layers of (Ge-2)(1-x)(ZnSe)(x) solid solutions from solution-melt, limited by horizontal GaAs and Ge substrates have been grown. The dependence of lattice perfection on growth conditions is shown. X-ray fluorescence spectrum, diffraction pattern and scanning picture, photoluminescence the dependence of Hall mobility from temperature and current-voltage (I-V) characteristics of the structures are studied.