Polycrystalline CdX (X=S, Se, Te) films are electrodeposited from aqueous and non-aqueous (ethylene glycol) baths onto different substrates at different temperatures. In order to increase the conductivity of the films, as-deposited films are annealed in a nitrogen atmosphere. Photoelectrochemical studies are carried out using 1 M NaOH-1 M Na2S-1 MS electrolyte under light intensity of 37 mW/cm(2) From photoelectrochemical characterisations it is concluded that the deposited CdS, CdSe and CdTe are n-type semiconductors. Interestingly the CdX films deposited from aqueous and non-aqueous baths showed comparable photoelectrochemical properties.