The paper presents the results of testing the electrical properties of polycrystalline thin films Of MoS2 obtained and its intercalates of M0.5MoS2; where M = Ga, In or T1. The investigations were carried out according to a five-level rotational plan. Threefold repeatability of measurement was applied at respective stages of this plan. The experimental results were subjected to statistical analysis in accordance with developed methods. An exponential model of the electrical conductivity was developed for the semiconducting materials obtained. Model coefficients were determined using the least square method. The compounds obtained are semiconductors with energy gap 0.88-0.92 ev, activation energy of doping levels 0.009-0.10 eV and the specific conductivity at room temperature 2.22-3.67 Omega (-1) cm(-1).