SrZrO3 thin films were prepared by sol-gel to explore the possibility of SrZrO3 to be used as a gate material for MOSFET application. Films were spin-coated layer by layer on Pt/TiO2/SiO2/Si and silicon substrates and then annealed by rapid thermal annealing at different temperatures ranging form 500 to 900 degreesC. The energy gap calculated form optical transmittance spectrum of SrZrO3 thin films on quartz is about 4.63 eV. Dielectric constant of SrZrO3 film is bout 25 determined by c-f measurement and the film thickness. Microstructure and surface morphology of the films were investigated by X-ray diffraction and scanning electron microscopy (SEM), respectively. The film maintained amorphous until being annealed at a temperature above 800 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.